Manufacturer: FUJI
Type: Power Transistor Module
Model: 1DI150GF-100
Collector-base voltage VCBO: 1000 V
Collector-emitter voltage VCEO: 1000 V
Emitter-base voltage VEBO: 10 V
Collector current:
DC current IC: 50 A
1ms current ICP: 100 A
DC -IC: 50 A
Junction temperature Tj: +150 °C
Dimensions LxWxH: 108x61x39 mm
Weight: 0.5 kg
| Model | 1di150gf-100- |
|---|---|
| Condition | Used |
| Shelf No. | 201204 |
