Manufacturer: FUJI ‎

Type: Power Transistor Module

Model: ‎1DI150GF-100 ‎

Collector-base voltage V_CBO: 1000 V

Collector-emitter voltage V_CEO: 1000 V

Emitter-base voltage V_EBO: 10 V

Collector current:

DC current I_C: 50 A

1ms current I_CP: 100 A

DC -I_C: 50 A

Junction temperature Tj: +150 °C

Dimensions LxWxH: 108x61x39 mm

Weight: 0.5 kg